20 stern ave. springfield, new jersey 07081 u.s.a. the rf line npn silicon rf power transistor designed for 24 volt uhf large-signal, common emitter, class a linear amplifier applications in industrial and commercial equipment operating in the range of 800-960 mhz. ? specified for vqe = 24 vdc, ig = 0.3 adc characteristics output power = 2.1 watts cw minimum power gain = 12.5 db minimum ito = +43 dbm typical noise figure = 5.25 db ? characterized with small-signal s-parameters and series equivalent large-signal parameters from 800-960 mhz ? silicon nitride passivated ? 100% tested for load mismatch stress at all phase angles with 30:1 vswr @ 24 vdc, ic = 0.3 adc and rated output power . will withstand rf input overdrive of 0.4 w cw ? gold metallized, emitter ballasted for long life and resistance to metal migration ? circuit board photomaster available upon request by contacting rf tactical marketing in phoenix, az. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 378-8960 MRF857S class a 800-960 mhz 2.1 w (cw), 24 v npn silicon rf power transistor case305d-01, maximum ratings rating collector-emitter voltage collector-base voltage emitter-base voltage total device dissipation @ tc = 50c derate above 50c operating junction temperature storage temperature range symbol vceo vcbo vebo pd tj tstg value 30 55 4 17 0.114 200 -65to+150 unit vdc vdc vdc watts w/"c "c c thermal characteristics characteristic thermal resistance (tj = 15cpc, tc = 50c) symbol rejc max 8.4 unit c/w electrical characteristics characteristic symbol min typ off characteristics max unit collector-emitter breakdown voltage (ic = 20 ma, ib = 0) collector-emitter breakdown voltage (ic = 20 ma, vbe = 0) collector-base breakdown voltage (ic = 20 ma, ig = 0) emitter-base breakdown voltage (ie = 1 ma, ic = 0) collector cutoff current (vcb = 24 v, ie = 0) v(br)ceo v(br)ces v(br)cbo v(br)ebo !ces 28 55 55 4 ? 35 85 85 5 ? ? ? ? ? 1 vdc vdc vdc vdc ma (continued) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> n.i semi-conductors is believed to be both accurate and reliable at the time of"going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. ni semi-conductors encourages customers to verify that datasheets ;ire current before placing orders. onolitv
electrical characteristics ? continued characteristic symbol win i typ [ max unit on characteristics dc current gain (ic = 0.1 a, vce = 5v) hfe 30 60 120 ? dynamic characteristics output capacitance (vcb = 24v, f= 1 mhz) cob 2.4 3.3 4.4 pf functional characteristics common-emitter power gain (vce = 24 v, ic = 0.3 a, f = 840-900 mhz, power output = 2.1 w) load mismatch (p0 = 2.1 w) (vce = 24 v. !c = o-3 a. f = 840 mhz, load vswr = 30:1 , all phase angles) rf input overdrive (vce = 24 v, ic = 0.3 a, f = 840 mhz) no degradation third order intercept point (vce = 24 v, ic = 0.3 a) (f1 =900 mhz, f2 = 900.1 mhz, meas. @ imd 3rd order = -40 dbc) noise figure (vce = 24 v, ic = 0.3 a, f = 900 mhz) input return loss (vce = 24 v, ic = 0.3 a, f = 840-900 mhz, power output = 2.1 w) pg v pin(over) ito nf irl 12.5 13.5 . _ db no degradation in output power ~ + 43 ? ~ + 44.5 5.25 -15 0.4 ? -10 w dbm db db table 1. MRF857S common emitter s-parameters vce (v) 24 "c (a) 0.3 f (mhz) 800 820 840 860 880 900 920 940 960 s11 |s?| 0.915 0.915 0.915 0.913 0.914 0.914 0.913 0.915 0.916 ./* 165 165 165 164 164 163 163 162 162 s21 is21i 2.098 2.049 1.991 1.951 1.912 1.865 1.832 1.783 1.748 ^ 54 53 52 51 50 49 48 47 46 s12 i8?l 0.037 0.038 0.038 0.039 0.040 0.041 0.042 0.043 0.043 ts> 58 58 58 59 59 59 59 59 59 s22 is22i 0.343 0.345 0.349 0.352 0.355 0.359 0.362 0.366 0.369 z |
